EDS2010

The biennial international conference on Extended Defects in Semiconductors started in 1978 with a meeting in Hünfeld, Germany. Subsequent meetings rotated between Poland, France, Great Britain, Germany, Russia and Italy, culminating in EDS2004 in Chernogolovka, EDS2006 in Halle and EDS2008 in Poitiers.

EDS2010 is to be held at the University of Sussex at Brighton, UK from September 19th to 24th 2010. The conference is a forum for the current state of the art of investigation and modelling of extended defects in semiconductors. Scientists from universities, research institutes and industry make contributions to a deeper understanding of extended defects, their interaction with point defects and their role in the development of semiconductor technology.

The remit of the conference includes extended defects, nanostructures, nanoparticles, quantum dots and interfaces within semiconducting materials ranging from narrow to wide band gaps, including graphene-derived materials and diamond. Scientific interests range from defect geometry, electronic structure, dynamics, spectroscopy, microscopy, reactions and chemistry to introduction mechanisms, such as implantation and strained layers and the operation of devices such as integrated circuits, heterostructures, and solar cells.

EDS2010 will have two additional themes, firstly the structure and properties of extended defects in carbon materials and secondly, a focus on the work of Professor R Jones.

In conclusion, and most importantly, we note the passing of one of the founders of this conference series, Prof. Dr. Helmut Alexander in December last year, and we dedicate this meeting to his memory.

The official language of the conference will be English.

The conference will begin on Sunday evening (arrivals, drinks and buffet dinner) and end Friday lunchtime (depart).

Website by Gemma Haffenden