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International Conference on Extended Defects in Semiconductors 19th - 24th September 2010 |
Sussex University Brighton, UK |
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International Conference on Extended Defects in Semiconductors 19th - 24th September 2010 |
Sussex University Brighton, UK |
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Invited Speakers: Dr Laurent Pizzagalli (Poitiers, France) "Core dislocations in silicon: new aspects from numerical simulations" Dr Michelle Moram (Cambridge, UK) "Dislocation movement in the III-nitrides" Prof. Manfred Reiche (MPI, Halle, Germany) "Structure and properties of dislocations in interfaces of bonded silicon wafers" Prof. Nigel Browning (UCDavis, USA) "High Spatial and Temporal Resolution studies of Semiconductor Systems" Prof. Ichiro Yonenaga (Sendai, Japan) "The susceptibility of optical properties of GaN and ZnO to fresh dislocations." Prof. Nick Cowern (Newcastle, UK) "Defects and diffusion in Ge - a comparison with Si" Prof. Robert Hull (RPI, New York, USA) "Use of controlled surface defects to engineer assembly of epitaxial semiconductor nanostructures" Dr Jun Chen (NIMS, Tsukuba, Japan) "Electrical, optical and mechanical properties of GBs in mc-Si" Prof. Bob Jones (Exeter, UK) "Point and Extended defects in brown and nano-crystalline diamonds" Dr. Johann Michler (EMPA, Switzerland) "Sample size dependent brittle-ductile transition in semiconductors in uni-axial micro-compression experiments" Dr Heidi Nordmark (SINTEF, Norway) "H-initiated extended defects from plasma treatment: Comparison between c-Si and mc-Si" Dr Dariusz Chrobak (Silesia, Poland) "Nanoindentation of semiconductors: experiment and atomistic simulations" Prof. G. P. Dimitrakopulos (Thessaloniki, Greece) "Interfacial sources of extended defects in nonpolar and semipolar III-Nitride heteroepitaxy" Prof. Bo Yang (FIT, Florida, USA) "Nanoscale continuum calculation of basal dislocation core structures in graphite"
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