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International Conference on Extended Defects in Semiconductors 19th - 24th September 2010 |
Sussex University Brighton, UK |
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International Conference on Extended Defects in Semiconductors 19th - 24th September 2010 |
Sussex University Brighton, UK |
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SCIENTIFIC COMMITTEE: Tonio Buonassisi, MIT, USA Anna Cavallini, University of Bologna, Italy Cor Claeys, IMEC, Leuven, Belgium Malcolm I. Heggie, University of Sussex, Brighton, UK Robert Hull, University of Virginia, Charlottesville, USA Robert Jones, University of Exeter, UK Martin Kittler, IHP Frankfurt(Oder) and IHP/BTU Joint Lab Cottbus, Germany Philomela Komninou, University of Thessaloniki, Greece Vitaly V. Kveder, Institute of Solid State Physics RAS, Chernogolovka, Russia Marc Legros, CEMES, Toulouse, France Hartmut Leipner, University of Halle, Germany Bernard Pichaud, Université Aix-Marseille III, Marseille, France Pirouz Pirouz, Case Western Reserve University, Cleveland, USA Jacques Rabier, University of Poitiers, France Michael Seibt, Georg-August Universität Göttingen, Germany Marek Skowronski, Carnegie-Mellon University, Pittsburgh, USA Horst P. Strunk, University of Erlangen-Nürnberg, Germany Eicke Weber, Fraunhofer Institute, Freiburg, Germany Tadeusz Wosinski, Institute of Physics PAS, Warsaw, Poland Ichiro Yonenaga, Institute of Materials Research, Tohoku University, Japan
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