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International Conference on Extended Defects in Semiconductors 19th - 24th September 2010 |
Sussex University Brighton, UK |
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International Conference on Extended Defects in Semiconductors 19th - 24th September 2010 |
Sussex University Brighton, UK |
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TOPICS The remit of the conference includes extended defects, nanostructures, nanoparticles, quantum dots and interfaces within semiconducting materials ranging from narrow to wide band gaps, including graphene-derived materials and diamond. Scientific interests range from defect geometry, electronic stucture, dynamics, spectroscopy, microscopy, reactions and chemistry to introduction mechanisms, such as implantation and strained layers and the operation of devices such as integrated circuits, heterostructures, and solar cells.
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